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Super Silicon Crystal Research Institute Corp.

USPTO Granted Patents = 20

Forward Citations = 727

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25 inventors (with patents filed for the assignee):

Shinji Nakahara (4 out of 5 patents)

Masato Imai (4 out of 5 patents)

Masanori Mayusumi (4 out of 5 patents)

4. Kazutoshi Inoue (4 out of 5 patents)

5. Keiichiro Asakawa (4 out of 8 patents)

6. Hiroshi Oishi (4 out of 17 patents)

7. Yutaka Shiraishi (4 out of 4 patents)

8. Shintoshi Gima (2 out of 2 patents)

9. Kohzo Abe (2 out of 4 patents)

10. Hirotoshi Yamagishi (2 out of 37 patents)

11. Makoto Kuramoto (2 out of 2 patents)

12. Hideaki Minami (2 out of 2 patents)

13. Yoshiyuki Tomita (1 out of 14 patents)

14. Nobuaki Iguchi (1 out of 2 patents)

15. Junichi Matsuzaki (1 out of 5 patents)

20 patents: Sort by Forward Citations

1. 6863735 - Epitaxial growth furnace (2005-03-08),

2. 6578589 - Apparatus for manufacturing semiconductor wafer (2003-06-17),

3. 6372040 - Single crystal growth apparatus and single crystal growth method (2002-04-16),

4. 6361597 - Single crystal material auxiliary melting apparatus and single crystal material melting method (2002-03-26),

5. 6262393 - Epitaxial growth furnace (2001-07-17),

6. 6261166 - Wire cleaning apparatus (2001-07-17),

7. 6245152 - Method and apparatus for producing epitaxial wafer (2001-06-12),

8. 6228167 - Single crystal pulling apparatus (2001-05-08),

9. 6217648 - Single crystal pull-up apparatus and single crystal pull-up method (2001-04-17),

10. 6196901 - Method of double-side lapping a wafer and an apparatus therefor (2001-03-06),

11. 6165054 - Double side grinding apparatus and double side polishing apparatus (2000-12-26),

12. 6117234 - Single crystal growing apparatus and single crystal growing method (2000-09-12),

13. 6077348 - Single crystal pulling apparatus, single crystal support mechanism, and (2000-06-20),

14. 6065461 - Ingot slicing method and apparatus therefor (2000-05-23),

15. 6033472 - Semiconductor single crystal manufacturing apparatus (2000-03-07),

Super Silicon Crystal Research Institute Corp. is a leading research institution specializing in the development of cutting-edge silicon crystal technology. Our team of experts is dedicated to advancing the field of materials science and pushing the boundaries of innovation. With a focus on sustainability and efficiency, we aim to revolutionize the way silicon crystals are produced and utilized in various industries.

This text is generated by artificial intelligence and may not be accurate.

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USPTO Data Jan 1 1976 - Dec 9 2025

20 Patents

#1 in Annaka

#2,882 in Japan

#30,316 in the World

Super Silicon Crystal Research Institute Corp.

Forward Citations = 727

25 inventors:

Shinji Nakahara (4 out of 5 patents)

Masato Imai (4 out of 5 patents)

Masanori Mayusumi (4 out of 5 patents)

4. Kazutoshi Inoue (4 out of 5 patents)

5. Keiichiro Asakawa (4 out of 8 patents)

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