The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 11, 1998
Filed:
Jan. 29, 1996
Masanori Kimura, Annaka, JP;
Ken Yoshizawa, Annaka, JP;
Teruaki Fukami, Fukushima-ken, JP;
Hirotoshi Yamagishi, Annaka, JP;
Shin-Etsu Handotai Co., Ltd., Tokyo, JP;
Abstract
A high-frequency induction heater for use in the growth of a semiconductor single crystal by the FZ method, including a plurality of high-frequency induction heating coils disposed in concentric juxtaposed relation to each other and each having a pair of power supply terminals provided for supplying a high-frequency current to the associated heating coil, with the power supply terminals of one of the heating coils being disposed in a space defined between opposite ends of an adjacent heating coil disposed outside the one heating coil, wherein a pair of electrically conductive members is attached to the pair of power supply terminals, respectively, of at least an innermost one of the heating coils so as to cover a space defined between the power supply terminals of the innermost heating coil. With the induction heater thus constructed, the so-called 'pulsation', i.e., microscopic resistivity fluctuations and the macroscopic resistivity distribution in the diametrical and growth directions can be improved at one time.