The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 07, 1995

Filed:

Apr. 05, 1994
Applicant:
Inventor:

Nobuyoshi Fujimaki, Annaka, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
437-8 ; 148D / ;
Abstract

The method and apparatus of this invention for evaluation of a semiconductor production process effect the determination of the shallow pit density of a silicon wafer by predetermining the correlation between the average shallow pit density on a wafer surface obtained by microscopic observation and the average magnitude of a scattered light on the wafer surface obtained by the determination with the wafer surface inspection system operated in the haze mode, determining the average magnitude on the wafer surface of a scattered light for a silicon wafer treated by a semiconductor production process under evaluation, and analyzing the data found by the determination in combination with the correlation mentioned above. Thus, they bring about an effect of enabling the determination to be carried out automatically and quickly and exalting the accuracy of determination and allowing a generous cut in the time required for the determination as compared with the conventional determination resorting to visual measurement and evaluation.


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