Company Filing History:

6 out of 14,705

Infineon Technologies Ag

patents

1 out of 29,232

Texas Instruments Corporation

patents

3 out of 832,680

Other

patents

where one patent can have more than one assignee

Years Active: 2002-2020

where 'Filed Patents' based on already Granted Patents

9 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 10559594 - Approach to the manufacturing of monolithic 3-dimensional high-rise integrated-circuits with vertically-stacked double-sided fully-depleted silicon-on-insulator transistors (2020-02-11),

2. 8390080 - Transistor with dopant-bearing metal in source and drain (2013-03-05),

3. 8085518 - Electronic circuit, electronic circuit arrangement and method for producing an electronic circuit (2011-12-27),

4. 7446379 - Transistor with dopant-bearing metal in source and drain (2008-11-04),

5. 7094650 - Gate electrode for FinFET device (2006-08-22),

6. 6921691 - Transistor with dopant-bearing metal in source and drain (2005-07-26),

7. 6551874 - Self-aligned STI process using nitride hard mask (2003-04-22),

8. 6486015 - Low temperature carbon rich oxy-nitride for improved RIE selectivity (2002-11-26),

9. 6365328 - Semiconductor structure and manufacturing method (2002-04-02),

Hello! I will be glad to help you with the article about inventor Nirmal Chaudhary.

Title: The Innovative Mind of Nirmal Chaudhary

Introduction:

Nirmal Chaudhary, a prolific inventor based in Austin, TX, has made significant contributions to the field of technology with a total of 9 patents to his name.

Latest Patents:

One of his latest patents includes an approach to the manufacturing of monolithic 3-dimensional high-rise integrated-circuits with vertically-stacked double-sided fully-depleted silicon-on-insulator transistors. This groundbreaking architecture aims to enhance operational speed and denser device integration in 3D-ICs by reducing RC-delays and eliminating bulky electrically conductive Through-Silicon VIAS. Another patent involves a transistor design with dopant-bearing metal in source and drain regions, enabling the formation of doped regions with precise junction depths.

Career Highlights:

Nirmal Chaudhary has notably worked with companies like Infineon Technologies AG, where his innovative ideas have been instrumental in driving technological advancements in the industry.

Collaborations:

Throughout his career, Nirmal has collaborated with industry experts such as Hong-Jyh Li and Thomas Schulz, further expanding his insights and contributing to cutting-edge technological developments.

Conclusion:

In conclusion, Nirmal Chaudhary's inventive spirit and dedication to pushing the boundaries of technology have solidified his reputation as a visionary inventor in the field. His patents stand as a testament to his commitment to innovation and excellence in the ever-evolving landscape of technology.

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