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For the Inventor, By the Inventor

Austin, TX, United States of America

Nirmal Chaudhary

This inventor holds 9 USPTO granted patents. Top assignees: Infineon Technologies Ag, Texas Instruments Corporation, Other. Active years: 2002-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nirmal Chaudhary. Retrieved from https://idiyas.com/inventor/nirmal-chaudhary

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 9

% Patents Active = 66.7

Average Co-Inventor Count = 2.6

ph-index = 5

Forward Citations = 134(Granted Patents)


Location History:

  • Poughkeepsie, NY (US) (2002 - 2003)
  • Boise, ID (US) (2011)
  • Austin, TX (US) (2005 - 2013)
  • Leesburg, VA (US) (2020)

Company Filing History:

goldMedal6 out of 15,027 
 
Infineon Technologies Ag
 patents
silverMedal1 out of 29,888 
 
Texas Instruments Corporation
 patents
bronzeMedal3 out of 834,513 
Other
 patents
where one patent can have more than one assignee

Years Active: 2002-2020

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9 patents (USPTO):Explore Patents
1. 10559594 - Approach to the manufacturing of monolithic 3-dimensional high-rise integrated-circuits with vertically-stacked double-sided fully-depleted silicon-on-insulator transistors (2020-02-11),
2. 8390080 - Transistor with dopant-bearing metal in source and drain (2013-03-05),
3. 8085518 - Electronic circuit, electronic circuit arrangement and method for producing an electronic circuit (2011-12-27),
4. 7446379 - Transistor with dopant-bearing metal in source and drain (2008-11-04),
5. 7094650 - Gate electrode for FinFET device (2006-08-22),
6. 6921691 - Transistor with dopant-bearing metal in source and drain (2005-07-26),
7. 6551874 - Self-aligned STI process using nitride hard mask (2003-04-22),
8. 6486015 - Low temperature carbon rich oxy-nitride for improved RIE selectivity (2002-11-26),
9. 6365328 - Semiconductor structure and manufacturing method (2002-04-02),

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Title: The Innovative Mind of Nirmal Chaudhary

Introduction:

Nirmal Chaudhary, a prolific inventor based in Austin, TX, has made significant contributions to the field of technology with a total of 9 patents to his name.

Latest Patents:

One of his latest patents includes an approach to the manufacturing of monolithic 3-dimensional high-rise integrated-circuits with vertically-stacked double-sided fully-depleted silicon-on-insulator transistors. This groundbreaking architecture aims to enhance operational speed and denser device integration in 3D-ICs by reducing RC-delays and eliminating bulky electrically conductive Through-Silicon VIAS. Another patent involves a transistor design with dopant-bearing metal in source and drain regions, enabling the formation of doped regions with precise junction depths.

Career Highlights:

Nirmal Chaudhary has notably worked with companies like Infineon Technologies AG, where his innovative ideas have been instrumental in driving technological advancements in the industry.

Collaborations:

Throughout his career, Nirmal has collaborated with industry experts such as Hong-Jyh Li and Thomas Schulz, further expanding his insights and contributing to cutting-edge technological developments.

Conclusion:

In conclusion, Nirmal Chaudhary's inventive spirit and dedication to pushing the boundaries of technology have solidified his reputation as a visionary inventor in the field. His patents stand as a testament to his commitment to innovation and excellence in the ever-evolving landscape of technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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