The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 26, 2002

Filed:

Apr. 25, 2000
Applicant:
Inventors:

Nirmal Chaudhary, Poughkeepsie, NY (US);

Richard A. Conti, Mt. Kisco, NY (US);

Assignee:

Other;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/18238 ;
U.S. Cl.
CPC ...
H01L 2/18238 ;
Abstract

Reactive ion etch (RIE) selectivity during etching of a feature nearby embedded structure is improved by using a silicon oxynitride layer formed with carbonization throughout layer.


Find Patent Forward Citations

Chaudhary, Nirmal. (2002). Low temperature carbon rich oxy-nitride for improved rie selectivity (U.S. Patent No. 6486015). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6486015

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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