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For the Inventor, By the Inventor

Hamilton, MA, United States of America

Neil J Bassom

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This inventor holds 45 USPTO granted patents and 18 published patent applications and 2 EPO patents, primarily in Ion Source Technology. Top assignees: Varian Semiconductor Equipment Associates, Inc., Axcelis Technologies, Inc., Fei Comapny. Active years: 2005-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Neil J Bassom. Retrieved from https://idiyas.com/inventor/neil-j-bassom

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 45 

% Patents Active = 91.1

 

Average Co-Inventor Count = 2.6

ph-index = 7

Forward Citations = 119(Granted Patents)


Company Filing History:

goldMedal22 out of 916 
 
Varian Semiconductor Equipment Associates, Inc.
 patents
silverMedal19 out of 406 
 
Axcelis Technologies, Inc.
 patents
bronzeMedal4 out of 862 
 
Fei Comapny
 patents

Years Active: 2005-2026

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Areas of Expertise:
Ion Beam
Dual Source Injector
Dynamic Temperature Control
Aluminum Ion Beam
Hydraulic Feed System
Ceramic Ion Source
Negative Hydrogen Ion
Gas Injection
Etching Techniques
Particle Control
Sputter Yield
Lifetime Extension
45 patents (USPTO):Explore Patents
1. 12571088 - High incidence angle graphite for particle control with dedicated low sputter yield ion beam (2026-03-10),
2. 12566064 - Twist and tilt verification using diffraction patterns (2026-03-03),
3. 12476085 - Shielded gas inlet for an ion source (2025-11-18),
4. 12431332 - High energy implanter with small footprint (2025-09-30),
5. 12154763 - Hydraulic feed system for an ion source (2024-11-26),
6. 12112918 - Dual source injector with switchable analyzing magnet (2024-10-08),
7. 12051561 - Fluorine based molecular co-gas when running dimethylaluminum chloride as a source material to generate an aluminum ion beam (2024-07-30),
8. 11823858 - Dual source injector with switchable analyzing magnet (2023-11-21),
9. 11798775 - Extended lifetime dual indirectly-heated cathode ion source (2023-10-24),
10. 11756772 - System and method for extending a lifetime of an ion source for molecular carbon implants (2023-09-12),
11. 11728140 - Hydraulic feed system for an ion source (2023-08-15),
12. 11699565 - Fluorine based molecular co-gas when running dimethylaluminum chloride as a source material to generate an aluminum ion beam (2023-07-11),
13. 11699563 - Etching aluminum nitride or aluminum oxide to generate an aluminum ion beam (2023-07-11),
14. 11545330 - Ion source with multiple bias electrodes (2023-01-03),
15. 11244800 - Stepped indirectly heated cathode with improved shielding (2022-02-08),

Title: The Innovator: Neil J Bassom's Contributions to Ion Implantation Technology

Introduction: Neil J Bassom, a prolific inventor based in Hamilton, MA, has made significant contributions to the field of ion implantation technology. With an impressive 38 patents to his name, Bassom's innovative work has helped shape the industry.

Latest Patents: Among his latest patents is the "Dual source injector with switchable analyzing magnet," a groundbreaking ion implantation system that features a mass analyzing magnet capable of distinguishing between two ion beams. Additionally, Bassom's "Extended lifetime dual indirectly-heated cathode ion source" showcases his expertise in developing ion sources with enhanced operational efficiency.

Career Highlights: Bassom has honed his skills and expertise while working at notable companies such as Varian Semiconductor Equipment Associates, Inc. and Axcelis Technologies, Inc. His journey in these organizations has been marked by a relentless pursuit of innovation and excellence in ion implantation technologies.

Collaborations: Throughout his career, Bassom has collaborated with talented individuals such as Craig Richard Chaney and Wilhelm P Platow. These collaborations have not only enriched his own work but have also led to the development of cutting-edge technologies in the field of ion implantation.

Conclusion: In conclusion, Neil J Bassom's impact on the world of ion implantation technology is undeniable. His extensive patent portfolio and successful career at renowned companies underscore his status as a true innovator in the field. Bassom's relentless pursuit of excellence continues to inspire and drive advancements in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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