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For the Inventor, By the Inventor

Singapore, Singapore

Narayanan Balasubramanian

This inventor holds 15 USPTO granted patents and 1 published patent application and 1 EPO patent. Top assignees: Agency for Science, Technology and Research, Chartered Semiconductor Manufacturing Ltd (Corporation), Institute of Microelectronics. Active years: 1998-2012.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Narayanan Balasubramanian. Retrieved from https://idiyas.com/inventor/narayanan-balasubramanian

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 15 

% Patents Active = 26.7


Average Co-Inventor Count = 3.3

ph-index = 7

Forward Citations = 224(Granted Patents)


Company Filing History:

goldMedal6 out of 1,561 
 
Agency for Science, Technology and Research
 patents
silverMedal4 out of 962 
 
Chartered Semiconductor Manufacturing Ltd (Corporation)
 patents
bronzeMedal2 out of 80 
 
Institute of Microelectronics
 patents
4. 1 out of 1 
 
Agency for Sceince, Technology and Reasearch
 patent
5. 1 out of 854 
 
National University of Singapore
 patents
6. 1 out of 834,513 
Other
 patents

Years Active: 1998-2012

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15 patents (USPTO):Explore Patents
1. 8236595 - Nanowire sensor, nanowire sensor array and method of fabricating the same (2012-08-07),
2. 7682914 - Fully salicided (FUCA) MOSFET structure (2010-03-23),
3. 7439165 - Method of fabricating tensile strained layers and compressive strain layers for a CMOS device (2008-10-21),
4. 7425751 - Method to reduce junction leakage current in strained silicon on silicon-germanium devices (2008-09-16),
5. 7397090 - Gate electrode architecture for improved work function tuning and method of manufacture (2008-07-08),
6. 7316950 - Method of fabricating a CMOS device with dual metal gate electrodes (2008-01-08),
7. 7294890 - Fully salicided (FUSA) MOSFET structure (2007-11-13),
8. 6846720 - Method to reduce junction leakage current in strained silicon on silicon-germanium devices (2005-01-25),
9. 6664596 - Stacked LDD high frequency LDMOSFET (2003-12-16),
10. 6551937 - Process for device using partial SOI (2003-04-22),
11. 6489203 - Stacked LDD high frequency LDMOSFET (2002-12-03),
12. 6468853 - Method of fabricating a shallow trench isolation structure with reduced local oxide recess near corner (2002-10-22),
13. 6235591 - Method to form gate oxides of different thicknesses on a silicon substrate (2001-05-22),
14. 6200887 - Method to form a smooth gate polysilicon sidewall in the fabrication of integrated circuits (2001-03-13),
15. 5767004 - Method for forming a low impurity diffusion polysilicon layer (1998-06-16),

Title: Narayanan Balasubramanian: Innovator in Nanotechnology and Semiconductor Engineering

Introduction

Narayanan Balasubramanian is a prominent inventor based in Singapore, known for his significant contributions to the fields of nanotechnology and semiconductor engineering. With a total of 15 patents to his name, he has made remarkable advancements that have the potential to impact various technological applications.

Latest Patents

Among his latest patents are the nanowire sensor and the nanowire sensor array, which detail a method of fabricating a sensor that includes a nanowire on a support substrate. This innovative method involves forming a fin structure from a semiconductor layer, oxidizing the fin portion to create a nanowire surrounded by an oxide layer, and establishing a microfluidic channel. Another notable patent is the fully salicided (FUCA) MOSFET structure, which describes a method for creating a MOSFET with a fully silicided gate electrode and raised source/drain elements. This design enhances the process margin for forming contacts to silicided regions, showcasing his expertise in semiconductor fabrication.

Career Highlights

Narayanan has worked with esteemed organizations such as the Agency for Science, Technology and Research and Chartered Semiconductor Manufacturing Ltd. His experience in these companies has allowed him to refine his skills and contribute to groundbreaking technologies in the semiconductor industry.

Collaborations

Throughout his career, Narayanan has collaborated with notable colleagues, including Wei Yip Loh and Ranganathan Nagarajan. These partnerships have fostered an environment of innovation and have led to the development of advanced technologies.

Conclusion

Narayanan Balasubramanian's work in nanotechnology and semiconductor engineering exemplifies the spirit of innovation. His patents and career achievements reflect his dedication to advancing technology and improving the efficiency of electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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