The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 22, 2003
Filed:
Aug. 23, 2001
Cai Jun, Portland, ME (US);
Ren Chang Hong, Singapore, SG;
Ranganathan Nagarajan, Singapore, SG;
Narayanan Balasubramanian, Singapore, SG;
Yung Chii Liang, Singapore, SG;
Other;
Abstract
A process for manufacturing a buried oxide layer for use in partial SOI structures is described. The process begins with the etching of deep trenches into a silicon body. For a preselected depth below the surface, the inner walls of the trenches are protected and oxidation of said walls is then effected until pinch-off occurs, both inside the trenches and in the material between trenches. The result is a continuous layer of wade whose size and shape are determined by the number and location of the trenches. Application of the process to the manufacture of a partial SOI RFLDMOS structure is also described together with performance data for the resulting device.