Ren Chang Hong

Title: Ren Chang Hong: Innovator in Partial SOI Technology

Introduction

Ren Chang Hong is a notable inventor based in Singapore, SG. He has made significant contributions to the field of semiconductor technology, particularly in the development of processes for manufacturing buried oxide layers in partial Silicon-On-Insulator (SOI) structures. His innovative approach has implications for various electronic devices.

Latest Patents

Ren Chang Hong holds a patent for a process titled "Process for device using partial SOI." This patent describes a method for manufacturing a buried oxide layer for use in partial SOI structures. The process begins with etching deep trenches into a silicon body. For a preselected depth below the surface, the inner walls of the trenches are protected, and oxidation of these walls is then performed until pinch-off occurs, both inside the trenches and in the material between them. The result is a continuous layer of oxide whose size and shape are determined by the number and location of the trenches. The application of this process to the manufacture of a partial SOI RFLDMOS structure is also described, along with performance data for the resulting device. Ren Chang Hong has 1 patent to his name.

Career Highlights

Throughout his career, Ren Chang Hong has demonstrated a commitment to advancing semiconductor technology. His work has not only contributed to the understanding of partial SOI structures but has also paved the way for improved device performance in the electronics industry.

Collaborations

Ren has collaborated with notable colleagues, including Cai Jun and Narayanan Balasubramanian. Their combined expertise has further enhanced the research and development efforts in their field.

Conclusion

Ren Chang Hong is a distinguished inventor whose work in partial SOI technology has made a significant impact on the semiconductor industry. His innovative processes continue to influence the development of advanced electronic devices.