Yung Chii Liang

Title: Yung Chii Liang: Innovator in Power MOSFET Technologies

Introduction

Yung Chii Liang is a renowned inventor based in Singapore. He has made significant contributions to the field of semiconductor technology, evidenced by his two patents. His innovative work focuses on improving the performance and reliability of MOSFET devices, which are crucial components in electronic circuits.

Latest Patents

Yung's latest patents include groundbreaking technologies that enhance the capabilities of power MOSFETs.

1. **Power MOSFET having enhanced breakdown voltage**: This patent describes a MOSFET that incorporates a dielectric—preferably a metal thick oxide—extending along the MOSFET's drift region. The inclusion of this dielectric allows for modulation of the drift region's electric field, leading to an increased breakdown voltage of a reverse-biased semiconductor junction. This innovation permits higher doping concentrations in the drift region while maintaining a desired breakdown voltage compared to traditional MOSFETs.

2. **Process for device using partial SOI**: This patent outlines a method for manufacturing a buried oxide layer for use in partial Silicon-On-Insulator (SOI) structures. The process begins with the etching of deep trenches in a silicon body and involves the oxidation of the trench walls until pinch-off occurs. The result is a continuous layer whose dimensions depend on the trench configuration. The application of this process to create partial SOI RFLDMOS structures showcases enhanced performance metrics for the resulting devices.

Career Highlights

Yung has worked at the National University of Singapore, where he has played a pivotal role in research and development within the semiconductor domain. His work has propelled advancements in device fabrication techniques and has contributed to the broader knowledge base of MOSFET technology.

Collaborations

Throughout his career, Yung Chii Liang has collaborated with prominent figures in the field. Notable collaborators include Ganesh S Samudra and Kian Paau Gan, with whom he has worked on various projects that push the boundaries of semiconductor innovation.

Conclusion

Yung Chii Liang's work in the field of power MOSFET technologies demonstrates his commitment to advancing semiconductor performance. His patents not only reflect innovative engineering solutions but also position him as a key contributor to the evolution of electronic devices. Through his research and collaborations, Yung continues to influence the future of semiconductor technology in significant ways.