The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 08, 2005
Filed:
Jun. 04, 2002
Yung Chii Liang, Singapore, SG;
Ganesh Shankar Samudra, Singapore, SG;
Kian Paau Gan, Singapore, SG;
Xin Yang, Singapore, SG;
Yung Chii Liang, Singapore, SG;
Ganesh Shankar Samudra, Singapore, SG;
Kian Paau Gan, Singapore, SG;
Xin Yang, Singapore, SG;
National University of Singapore, Singapore, SG;
Abstract
A MOSFET includes a dielectric, preferably in the form of a metal thick oxide that extends alongside the MOSFET's drift region. A voltage across this dielectric between its opposing sides exerts an electric field into the drift region to modulate the drift region electric field distribution so as to increase the breakdown voltage of a reverse biased semiconductor junction between the drift region and body region. This allows for higher doping of the drift region, for a given breakdown voltage when compared to conventional MOSFETs.