Singapore, Singapore

Kian Paau Gan

This inventor holds 1 USPTO granted patent. Top assignee: National University of Singapore. Active years: 2005.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kian Paau Gan. Retrieved from https://idiyas.com/inventor/kian-paau-gan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 25(Granted Patents)


Company Filing History:


Years Active: 2005

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1 patent (USPTO):Explore Patents

Title: **Innovative Contributions of Kian Paau Gan in Semiconductor Technology**

Introduction

Kian Paau Gan, an esteemed inventor based in Singapore, has made significant contributions to the field of semiconductor technology. His research and innovations focus on enhancing the performance of MOSFETs, which play a critical role in various electronic devices. Kian's dedication to advancing technology has led him to secure a patent that showcases his inventive capabilities.

Latest Patents

Among Kian's notable achievements is a patent for a "Power MOSFET having enhanced breakdown voltage." This invention involves a MOSFET that integrates a dielectric, preferably in the form of a metal thick oxide, extending along the drift region of the device. The application of voltage across this dielectric generates an electric field within the drift region, thereby modulating the electric field distribution. This innovative approach increases the breakdown voltage of a reverse-biased semiconductor junction between the drift region and body region. As a result, higher doping of the drift region is made possible for a given breakdown voltage, outperforming conventional MOSFETs.

Career Highlights

Kian Paau Gan is affiliated with the National University of Singapore, where he continues to explore advancements in semiconductor technology. His commitment to research and development within this prestigious institution has laid the groundwork for innovative solutions in the field.

Collaborations

Throughout his career, Kian has collaborated with talented coworkers, including Yung Chii Liang and Ganesh S Samudra. Together, they work towards pushing the boundaries of semiconductor research and innovation, contributing to the overall enhancement of technology.

Conclusion

Kian Paau Gan stands out as a remarkable inventor whose patent on Power MOSFET technology represents a significant contribution to the semiconductor industry. His innovative spirit, combined with collaborative efforts at the National University of Singapore, positions him as a pivotal figure in the ongoing evolution of electronic devices. As technology advances, Kian's work will undoubtedly lead to further breakthroughs in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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