Xin Yang

Title: Innovations of Xin Yang in Power MOSFET Technology

Introduction

Xin Yang is a notable inventor based in Singapore, recognized for his contributions to semiconductor technology. He has developed a significant patent that enhances the performance of power MOSFETs, which are crucial components in various electronic devices.

Latest Patents

Xin Yang holds a patent for a "Power MOSFET having enhanced breakdown voltage." This innovative MOSFET design incorporates a dielectric, preferably in the form of a metal thick oxide, that extends alongside the MOSFET's drift region. The voltage across this dielectric creates an electric field in the drift region, modulating the electric field distribution. This advancement allows for an increased breakdown voltage of a reverse-biased semiconductor junction between the drift region and body region. Consequently, this design permits higher doping of the drift region for a given breakdown voltage compared to conventional MOSFETs.

Career Highlights

Xin Yang is affiliated with the National University of Singapore, where he continues to advance research in semiconductor technologies. His work has garnered attention for its potential applications in improving the efficiency and reliability of electronic devices.

Collaborations

Xin Yang collaborates with esteemed colleagues, including Yung Chii Liang and Ganesh S Samudra, who contribute to his research endeavors.

Conclusion

Xin Yang's innovative work in power MOSFET technology exemplifies the advancements being made in the field of semiconductors. His contributions are paving the way for more efficient electronic devices, showcasing the importance of research and development in this area.