The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 16, 2003
Filed:
Oct. 16, 2002
Institute of Microelectronics, Singapore, SG;
Abstract
A novel silicon RF LDMOSFET structure based on the use of a stacked LDD, is disclosed. The LDD has been modified from a single layer of N type material to a stack of three layers. These are upper and lower N type layers with a P type layer between them. The upper N type layer is heavily doped to reduce the on-resistance of the device, while the lower N type layer is lightly doped to reduce the output capacitance, thereby improving the high frequency performance. The middle P layer is heavily doped which allows it to bring about pinch-off of the two N layers, thereby raising the device's breakdown voltage. A process for manufacturing the device, as well as experimental data concerning its performance are also given.