Nagano, Japan

Naoto Fujishima

This inventor holds 49 USPTO granted patents and 1 EPO patent, primarily in Semiconductor Devices. Top assignees: Fuji Electric Co., Ltd., Fuji Electric Device Technology Co., Ltd., Fuji Electric Holdings Co., Ltd.. Active years: 1990-2018.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Naoto Fujishima. Retrieved from https://idiyas.com/inventor/naoto-fujishima

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 59.2


Average Co-Inventor Count = 2.1

ph-index = 16

Forward Citations = 827(Granted Patents)


Location History:

  • Matumoto, JP (1995)
  • Kanagawa, JP (1994 - 1996)
  • Kawasaki, JP (1995 - 1998)
  • Tokyo, JP (2004 - 2008)
  • Nagano, JP (1996 - 2011)
  • Matsumoto, JP (1990 - 2018)

Company Filing History:


Years Active: 1990-2018

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Areas of Expertise:
Semiconductor Device
Manufacturing Method
High Breakdown Voltage
Power MOSFET
Integrated Circuit
Trench MOSFET
Lateral Field Effect Transistor
Battery Protection Circuit
Vertical Trench MISFET
Low On Resistance
Bidirectional Device
Lateral Arrangement
49 patents (USPTO):Explore Patents

Title: Innovations of Naoto Fujishima in Semiconductor Technology

Introduction

Naoto Fujishima, an esteemed inventor based in Nagano, Japan, has made significant contributions to the field of semiconductor technology. With an impressive portfolio of 49 patents, Fujishima's innovations are pivotal to advancing electronic devices, enhancing their efficiency and reliability.

Latest Patents

Fujishima's latest inventions include a novel semiconductor device manufacturing method which involves the intricate deposition of nickel films and laser irradiation to form Ohmic contacts with silicon carbide (SiC) semiconductors. This method not only prevents electrical characteristic deterioration but also mitigates the warping and cracking issues often encountered with semiconductor wafers. Additionally, his patents cover a battery protection circuit and a battery pack design that utilizes a bidirectional Trench Lateral Power MOSFET (TLPM). This innovative design facilitates high breakdown voltage and low on-resistance, enhancing the overall performance of electronic circuits.

Career Highlights

Throughout his career, Naoto Fujishima has left a profound mark while working with renowned companies such as Fuji Electric Co., Ltd. and Fuji Electric Device Technology Co., Ltd. His expertise in semiconductor applications has contributed significantly to these organizations and the broader technology landscape.

Collaborations

Fujishima has collaborated with notable professionals in his field, including Akio Kitamura and Akio Sugi. Together, they have worked on various projects that further the development of cutting-edge semiconductor technologies, reinforcing the importance of teamwork in driving innovation.

Conclusion

Naoto Fujishima's relentless pursuit of innovation within the semiconductor industry has resulted in numerous patents that push the boundaries of technology. His contributions are a testament to the vital role inventors play in crafting a more efficient and technologically advanced future.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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