The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 21, 2010
Filed:
May. 25, 2007
Mutsumi Kitamura, Matsumoto, JP;
Akio Sugi, Matsumoto, JP;
Naoto Fujishima, Matsumoto, JP;
Shinichiro Matsunaga, Matsumoto, JP;
Mutsumi Kitamura, Matsumoto, JP;
Akio Sugi, Matsumoto, JP;
Naoto Fujishima, Matsumoto, JP;
Shinichiro Matsunaga, Matsumoto, JP;
Fuji Electric Systems Co., Ltd., Tokyo, JP;
Abstract
A bidirectional Trench Lateral Power MOSFET (TLPM) can achieve a high breakdown voltage and a low on-resistance. A plurality of straight-shaped islands having circular portions at both ends are surrounded by a trench arrangement. The islands provide first n source regions and a second n source region is formed on the outside of the islands. With such a pattern, the breakdown voltage in the case where the first n source regions are at a high potential can be higher than the breakdown voltage in the case where the second n source region is at a high potential. Alternatively, in the case of not changing the breakdown voltage, the on-resistance can be reduced.