The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 13, 2018
Filed:
Apr. 09, 2015
Fuji Electric Co., Ltd., Kawasaki-shi, JP;
Haruo Nakazawa, Matsumoto, JP;
Masaaki Tachioka, Mutsumoto, JP;
Naoto Fujishima, Matsumoto, JP;
Masaaki Ogino, Matsumoto, JP;
Tsunehiro Nakajima, Matsumoto, JP;
Kenichi Iguchi, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kawasaki-shi, JP;
Abstract
A first nickel film is deposited inside a contact hole of an interlayer dielectric formed on an n-type SiC substrate. Irradiation with a first laser is carried out, forming an Ohmic contact with a silicon carbide semiconductor. A second nickel film and a front surface electrode film are deposited on the first nickel film, forming a source electrode. The back surface of the n-type SiC substrate is ground, and a third nickel film is formed on the ground back surface of the n-type SiC substrate. Irradiation with a second laser is carried out, forming an Ohmic contact with the silicon carbide semiconductor. A fourth nickel film and a back surface electrode film are deposited on the third nickel film, forming a drain electrode. By so doing, it is possible to prevent electrical characteristic deterioration of a semiconductor device, and to prevent warping and cracking of a wafer.