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For the Inventor, By the Inventor

Tokyo, Japan

Naotaka Iwata

USPTO Granted Patents = 16

Average Co-Inventor Count = 2.2

ph-index = 8

Forward Citations = 186(Granted Patents)


Company Filing History:

goldMedal15 out of 35,670 
 
Nec Corporation
 patents
silverMedal1 out of 59 
 
Nec Compound Semiconductor Devices, Ltd.
 patents

Years Active: 1987-2004

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16 patents (USPTO):Explore Patents
1. 6724253 - Predistortion type linearizer controlled by two control voltages (2004-04-20),
2. 6720200 - Field effect transistor and fabrication process thereof (2004-04-13),
3. 6624440 - Field effect transistor (2003-09-23),
4. 6570194 - Compound semiconductor field effect transistor with improved ohmic contact layer structure and method of forming the same (2003-05-27),
5. 6552373 - Hetero-junction field effect transistor having an intermediate layer (2003-04-22),
6. 6534790 - Compound semiconductor field effect transistor (2003-03-18),
7. 6436756 - Semiconductor device and fabrication method thereof (2002-08-20),
8. 6426523 - Heterojunction field effect transistor (2002-07-30),
9. 6388530 - Microwave amplifier implemented by heterojunction field effect transistors (2002-05-14),
10. 6353360 - Linearized power amplifier based on active feedforward-type predistortion (2002-03-05),
11. 6144051 - Semiconductor device having a metal-insulator-metal capacitor (2000-11-07),
12. 6130589 - Matching circuit and a method for matching a transistor circuit (2000-10-10),
13. 6072205 - Passive element circuit (2000-06-06),
14. 6025613 - Semiconductor device capable of reducing leak current and having (2000-02-15),
15. 5943577 - Method of making heterojunction bipolar structure having air and (1999-08-24),

Title: **Naotaka Iwata: Innovator in Semiconductor Technology**

Introduction

Naotaka Iwata is a distinguished inventor based in Tokyo, Japan, renowned for his significant contributions to semiconductor technology. With a portfolio of 16 patents, Iwata has developed groundbreaking innovations that enhance the performance of electronic devices.

Latest Patents

Among Naotaka Iwata’s latest patents is the "Predistortion Type Linearizer Controlled by Two Control Voltages." This invention incorporates a field-effect transistor (FET), which includes an input matching circuit for receiving an input signal and an output matching circuit for delivering an output signal. It also features an inductor with a variable impedance circuit, allowing the adjustment of impedance through control voltages to optimize signal performance.

Another noteworthy patent is related to a "Field Effect Transistor and Fabrication Process Thereof." This innovative method employs a mask to selectively etch an undoped GaAs layer, creating precise gate electrode structures and enhancing the characteristics of hetero-junction FETs. This process results in improved threshold stability and enhanced breakdown characteristics.

Career Highlights

Naotaka Iwata has had an impressive career, working with prominent companies such as NEC Corporation and NEC Compound Semiconductor Devices, Ltd. His expertise in semiconductor devices has paved the way for advancements in electronic technologies, influencing various applications in modern electronics.

Collaborations

Throughout his career, Iwata has collaborated with notable figures like Keiko Yamaguchi and Takeshi B. Nishimura. These partnerships have fostered an environment of innovation, leading to the development of cutting-edge technologies in the semiconductor industry.

Conclusion

Naotaka Iwata's contributions to the field of semiconductor technology through his patents and collaborations reflect his dedication to innovation. His work continues to have a profound impact on electronic device performance, ensuring that his legacy as a leading inventor endures in the technology landscape.

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