The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 14, 2002
Filed:
Dec. 28, 1999
Applicant:
Inventors:
Takeshi Nishimura, Tokyo, JP;
Naotaka Iwata, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/04 ;
U.S. Cl.
CPC ...
H03F 3/04 ;
Abstract
A microwave amplifier circuit controls the output power thereof depending upon an associated transmitter of a wireless telephone, and a main amplifier transistor and switching transistors of a drain bias controlling circuit are implemented by gallium-arsenide heterojunction field effect transistors so that, even if they are integrated on a single compound semiconductor substrate, the microwave amplifier circuit achieves a high power efficiency over a wide output voltage range.
Quick Actions:
Nishimura, Takeshi. (2002). Microwave amplifier implemented by heterojunction field effect transistors (U.S. Patent No. 6388530). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6388530
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile