The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 27, 2003
Filed:
Feb. 27, 2001
Applicant:
Inventors:
Takehiko Kato, Tokyo, JP;
Naotaka Iwata, Tokyo, JP;
Assignee:
NEC Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 3/10328 ; H01L 3/10336 ;
U.S. Cl.
CPC ...
H01L 3/10328 ; H01L 3/10336 ;
Abstract
The present invention provides a structure of a semiconductor device, the structure comprising: a compound semiconductor multi-layer structure having at least a channel region; and at least an ohmic contact layer provided adjacent to a first side face of the multi-layer structure, and the ohmic contact layer being in contact with at least a part of the first side face, wherein the ohmic contact layer has a top extending portion which extends in contact with a part of a top surface of the multi-layer structure.