Hwaseong, South Korea

Mu-Hui Park

This inventor holds 18 USPTO granted patents and 1 EPO patent, primarily in Nonvolatile Memory Technology. Top assignee: Samsung Electronics Co., Ltd.. Active years: 2008-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mu-Hui Park. Retrieved from https://idiyas.com/inventor/mu-hui-park

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 88.9


Average Co-Inventor Count = 1.9

ph-index = 5

Forward Citations = 78(Granted Patents)


Location History:

  • Seoul, KR (2008 - 2012)
  • Ansan-si, KR (2015)
  • Hwaeseong-si, KR (2017)
  • Hwaseong-si, KR (2016 - 2020)

Company Filing History:


Years Active: 2008-2020

Loading Chart...
Loading Chart...
Areas of Expertise:
Nonvolatile Memory
Phase Change Memory
Resistive Memory
Memory Devices
Sensing Circuits
Memory Systems
Data Sensing
Read Disturbance
Program Current
Memory Blocks
Three-Dimensional Memory
Reliable Read Operation
18 patents (USPTO):Explore Patents

Title: The Innovative Contributions of Mu-Hui Park

Introduction

Mu-Hui Park is a prominent inventor known for his significant contributions to the field of semiconductor technology. He is based in Hwaseong-si, South Korea, and has been awarded a total of 18 patents throughout his career. His work primarily focuses on the development of advanced memory devices that enhance data storage capabilities.

Latest Patents

One of Mu-Hui Park's latest patents is for a three-dimensional semiconductor memory device. This innovative device features first to third cell array layers that are sequentially stacked on a substrate. Each layer contains memory cells arranged in a grid pattern, utilizing variable resistance elements and tunnel field effect transistors connected in series. Additionally, the device includes bit lines and source lines that facilitate efficient data access and storage.

Another notable patent involves a method of operating a resistive memory device that reduces read disturbance. This device comprises a memory cell array with resistive memory cells positioned at the intersections of word lines and bit lines. The design includes two column selection circuits that enable selective connection to the bit lines, along with a control circuit that optimizes the read operation by determining the most efficient column selection circuit to use.

Career Highlights

Mu-Hui Park has made remarkable strides in the semiconductor industry, particularly through his work at Samsung Electronics Co., Ltd. His innovative designs and methods have contributed to the advancement of memory technology, making significant impacts on data storage solutions.

Collaborations

Throughout his career, Mu-Hui Park has collaborated with talented individuals such as Beak-Hyung Cho and Woo-Yeong Cho. These partnerships have fostered a creative environment that has led to groundbreaking advancements in semiconductor technology.

Conclusion

Mu-Hui Park's contributions to the field of semiconductor memory devices exemplify his innovative spirit and dedication to advancing technology. His patents reflect a commitment to improving data storage solutions, making him a key figure in the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…