The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 07, 2016
Filed:
Feb. 03, 2015
Applicant:
Samsung Electronics Co., Ltd., Suwon-Si, Gyeonggi-Do, KR;
Inventor:
Mu-Hui Park, Hwaseong-Si, KR;
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01); G11C 13/00 (2006.01); G11C 11/56 (2006.01); G11C 29/02 (2006.01);
U.S. Cl.
CPC ...
G11C 13/004 (2013.01); G11C 11/5678 (2013.01); G11C 13/0002 (2013.01); G11C 13/0004 (2013.01); G11C 13/0038 (2013.01); G11C 13/0061 (2013.01); G11C 29/021 (2013.01); G11C 29/026 (2013.01); G11C 29/028 (2013.01); G11C 2013/0054 (2013.01); G11C 2013/0092 (2013.01);
Abstract
Provided is a nonvolatile memory device. The nonvolatile memory device may include a resistive memory cell, a reference current generator which provides a reference current, a reference signal generator which provides a reference signal indicating a reference time for data read based on the reference current, and a read circuit which receives the reference signal and reads data by comparing a ramp-up time of a cell current flowing through the resistive memory cell with the reference time.