The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 27, 2012
Filed:
Apr. 05, 2010
Applicant:
Mu-hui Park, Seoul, KR;
Inventor:
Mu-Hui Park, Seoul, KR;
Assignee:
Samsung Electronics Co., Ltd., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
A phase change memory device includes a memory cell array having a plurality of phase change memory cells, a read bias generating circuit, a clamping circuit and a clamping control signal generating circuit (CCSGC). The read bias generating circuit provides a sensing node with a read bias for reading a resistance level of a selected phase change memory cell. The clamping circuit controls an amount of clamping current flowing into a bit line connected with the selected phase change memory cell. The CCSGC provides the clamping control signal to the clamping circuit and adjusts a level of the clamping control signal.