Mitchell C Taylor

Title: **The Innovative Mind of Mitchell C. Taylor**

Introduction

Mitchell C. Taylor, based in Lake Oswego, Oregon, is a prolific inventor recognized for his significant contributions to the field of semiconductor technology. With an impressive portfolio boasting 19 patents, he has greatly advanced the capabilities of NMOS transistors and related fabrication methods.

Latest Patents

Among his latest patents are methods for forming NMOS epitaxial layers that enhance the performance of NMOS transistors. One such patent outlines a methodology that involves several steps: (a) providing a substrate with a p-type silicon region; (b) depositing a silicon seed layer atop this region; (c) building a silicon-containing bulk layer; (d) implanting lattice adjusting elements or n-type dopants into the bulk layer; and (e) annealing the structure with an energy beam after implantation. His innovative approach helps in perfecting transistor performance by controlling channel strain and junction resistance.

Another notable patent focuses on plasma-implanted impurities in junction region recesses, which addresses the challenge of boron diffusion and current leakage in boron-doped junction materials. By using plasma immersion ion implantation, he achieves a conformal depth of arsenic and carbon impurities, ensuring improved efficiency and reliability in transistor devices.

Career Highlights

Mitchell C. Taylor has a rich professional background, having worked with leading companies in the technology sector, including Intel Corporation and Applied Materials, Inc. His experience in these organizations has enabled him to continually push the boundaries of innovation in transistor design and fabrication techniques.

Collaborations

Throughout his career, Taylor has collaborated with esteemed peers, including Mark Y. Liu and Robert S. Chau. Their combined expertise has contributed to numerous advancements in semiconductor technology and has fostered an environment of creativity and innovation.

Conclusion

Mitchell C. Taylor's work exemplifies the spirit of innovation in the field of semiconductor technology. His patents reflect a deep understanding of materials and processes, seeking to overcome challenges in NMOS transistor design. With a career dedicated to advancing technology, Taylor continues to inspire future generations of inventors and engineers.