The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 13, 2001
Filed:
Jun. 16, 1997
Mitchell C. Taylor, Lake Oswego, OR (US);
Babak Adibi, Santa Clara, CA (US);
Majeed Ali Foad, Horsham, GB;
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
In ion implantation processes for forming junctions in semiconductor devices, a proportion of ions implant into the semiconductor material beyond the desired junction depth due to channelling along axes and planes of symmetry in the crystal. A method is provided in which ions are implanted at a series of different energies starting with a lower energy than that required for the desired junction depth. The initial amorphising of the surface regions of the semiconductor during the lower energy implantation reduces the channelling probability when the ions are subsequently implanted at the full energy resulting in a more sharply defined junction.