Horsham, United Kingdom

Majeed Ali Foad


Average Co-Inventor Count = 1.5

ph-index = 2

Forward Citations = 77(Granted Patents)


Location History:

  • West Sussex, GB (1999)
  • Horsham, GB (2001)

Company Filing History:


Years Active: 1999-2001

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2 patents (USPTO):Explore Patents

Title: Innovations by Majeed Ali Foad: Pioneering Ion Implantation Techniques

Introduction

Majeed Ali Foad is an innovative inventor based in Horsham, GB. With a focus on semiconductor technologies, he has been granted two patents that contribute significantly to the field of ion implantation. His work is recognized for enhancing the precision and efficiency of semiconductor device fabrication.

Latest Patents

Majeed's latest patents include an innovative ion implantation method that addresses the challenges faced in semiconductor junction formation. In traditional processes, ions often implant beyond the desired junction depth due to channelling. Majeed's method mitigates this issue by introducing a series of ion energies, beginning with a lower energy to amorphize surface regions, thereby reducing channelling probabilities and achieving a more sharply defined junction.

Another notable patent involves the development of boron ion sources for ion implantation apparatus. In this invention, he describes an efficient process where BF₃ gas is passed over solid boron heated to high temperatures to produce boron vapour. This method not only simplifies the ion source’s operation but also improves the overall efficiency of the ion implantation process.

Career Highlights

Majeed Ali Foad currently works at Applied Materials, Inc., a leading company in the field of materials engineering solutions that support the advancement of semiconductor technologies. His contributions to the field have placed him at the forefront of innovation within the industry.

Collaborations

Throughout his career, Majeed has collaborated with esteemed colleagues such as Mitchell C. Taylor and Babak Adibi. These collaborations have fostered a rich environment of innovation, enabling the exchange of ideas that propel advancements in semiconductor processes.

Conclusion

Majeed Ali Foad's pioneering work in ion implantation methods represents significant advancements in semiconductor technology. His innovative approaches not only enhance the precision of device fabrication but also contribute to the overall efficiency of manufacturing processes. As he continues to make strides in his field, Majeed serves as an inspiration to fellow inventors and technologists.

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