The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
Jul. 12, 2004
Mark Doczy, Beaverton, OR (US);
Mitchell Taylor, Lake Oswego, OR (US);
Justin K. Brask, Portland, OR (US);
Jack Kavalieros, Portland, OR (US);
Suman Datta, Beaverton, OR (US);
Matthew V. Metz, Hillsboro, OR (US);
Robert S. Chau, Beaverton, OR (US);
Jack Hwang, Portland, OR (US);
Mark Doczy, Beaverton, OR (US);
Mitchell Taylor, Lake Oswego, OR (US);
Justin K. Brask, Portland, OR (US);
Jack Kavalieros, Portland, OR (US);
Suman Datta, Beaverton, OR (US);
Matthew V. Metz, Hillsboro, OR (US);
Robert S. Chau, Beaverton, OR (US);
Jack Hwang, Portland, OR (US);
Intel Corporation, Santa Clara, CA (US);
Abstract
Complementary metal oxide semiconductor metal gate transistors may be formed by depositing a metal layer in trenches formerly inhabited by patterned gate structures. The patterned gate structures may have been formed of polysilicon in one embodiment. The metal layer may have a workfunction most suitable for forming one type of transistor, but is used to form both the n and p-type transistors. The workfunction of the metal layer may be converted, for example, by ion implantation to make it more suitable for use in forming transistors of the opposite type.