The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 30, 2005
Filed:
Jan. 21, 2004
Applicants:
Jack Hwang, Portland, OR (US);
Mitchell C. Taylor, Lake Oswego, OR (US);
Mark Y. Liu, Portland, OR (US);
Nick Lindert, Beaverton, OR (US);
Inventors:
Jack Hwang, Portland, OR (US);
Mitchell C. Taylor, Lake Oswego, OR (US);
Mark Y. Liu, Portland, OR (US);
Nick Lindert, Beaverton, OR (US);
Assignee:
Intel Corporation, Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L021/336 ;
U.S. Cl.
CPC ...
Abstract
A polysilicon structure may be defined on a semiconductor substrate using plasma doping to dope the sidewalls and upper surface of the polysilicon material as well as the source drain extensions. Shortly after plasma doping, the structure may be encapsulated within a suitable capping layer to prevent the removal of the thin surface doped regions during subsequent semiconductor processing.