Company Filing History:
Years Active: 2009-2013
Title: Minhua Li: Innovator in Semiconductor Technology
Introduction
Minhua Li is a prominent inventor based in Sandy, UT (US), known for his significant contributions to semiconductor technology. With a total of 9 patents to his name, he has made remarkable advancements in the field, particularly in methods for processing semiconductor devices.
Latest Patents
Among his latest patents is a method and structure for dividing a substrate into individual devices. This innovative method involves obtaining individual dies from a semiconductor structure that includes a device layer with active regions separated by predefined spacings. Thick metal is selectively formed on the backside of the device layer, ensuring that it is applied only to the active regions. The semiconductor structure is then cut along the predefined spacings, allowing for the separation of active regions into individual dies. Another notable patent is for a vertical semiconductor device characterized by a bottom metal layer and a first P-type semiconductor layer with a surface crystal orientation of (110). This device is designed to enhance current conduction through its unique structural properties.
Career Highlights
Minhua Li is currently employed at Fairchild Semiconductor Corporation, where he continues to push the boundaries of semiconductor innovation. His work has been instrumental in developing technologies that improve the efficiency and performance of semiconductor devices.
Collaborations
Throughout his career, Minhua has collaborated with talented individuals such as Qi Wang and Hamza Yilmaz, contributing to a dynamic and innovative work environment.
Conclusion
Minhua Li's contributions to semiconductor technology through his patents and work at Fairchild Semiconductor Corporation highlight his role as a leading inventor in the industry. His innovative methods and structures continue to influence the development of advanced semiconductor devices.