The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 01, 2013
Filed:
Apr. 27, 2011
Minhua LI, Sandy, UT (US);
Qi Wang, Sandy, UT (US);
Gordon Sim, Sandy, UT (US);
Matthew Reynolds, Sandy, UT (US);
Suku Kim, South Jordan, UT (US);
James J. Murphy, South Jordan, UT (US);
Hamza Yilmaz, Saratoga, CA (US);
Minhua Li, Sandy, UT (US);
Qi Wang, Sandy, UT (US);
Gordon Sim, Sandy, UT (US);
Matthew Reynolds, Sandy, UT (US);
Suku Kim, South Jordan, UT (US);
James J. Murphy, South Jordan, UT (US);
Hamza Yilmaz, Saratoga, CA (US);
Fairchild Semiconductor Corporation, South Portland, ME (US);
Abstract
A method for obtaining individual dies from a semiconductor structure is disclosed. The semiconductor structure includes a device layer, and the device layer in turn includes active regions separated by predefined spacings. Thick metal is selectively formed on backside of the device layer such that thick metal is formed on backside of active regions but not on backside of the predefined spacings. The semiconductor structure is then cut along the predefined spacings to separate the active regions with thick metal on their backside into individual dies.