The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 18, 2011
Filed:
Dec. 10, 2008
Qi Wang, Sandy, UT (US);
Joelle Sharp, Herriman, UT (US);
Minhua LI, Sandy, UT (US);
Hui Chen, South Jordan, UT (US);
Qi Wang, Sandy, UT (US);
Joelle Sharp, Herriman, UT (US);
Minhua Li, Sandy, UT (US);
Hui Chen, South Jordan, UT (US);
Fairchild Semiconductor Corporation, So. Portland, ME (US);
Abstract
A first and a second substrate are bonded together to thereby form a unitary hybrid substrate. Predefined portions of the first substrate are removed to form openings in the first substrate through which surface regions of the second substrate are exposed. A selective epitaxial growth process that is selective with respect to the crystalline orientations of the first and second substrates is carried out to thereby form epitaxial silicon from the exposed surfaces of the second substrate but not from exposed surfaces of the first substrate. The epitaxial silicon formed from the exposed surfaces of the second substrate has the same crystalline orientation as the second substrate.