Ming Wang

Title: The Innovative Contributions of Ming Wang

Introduction

Ming Wang is a prominent inventor based in Wuhan, China, known for his significant contributions to the field of memory technology. With a total of eight patents to his name, he has made remarkable advancements in the development of 3D NAND memory devices.

Latest Patents

One of Ming Wang's latest patents is a 3D NAND memory device and method of forming the same. This innovative memory device includes a substrate, a bottom select gate (BSG) positioned over the substrate, and a series of word lines arranged in a staircase configuration. The design incorporates multiple insulating layers situated between the substrate, the BSG, and the word lines. The patent details the formation of first dielectric trenches within the BSG, which serve to separate it into several sub-BSGs. Additionally, common source regions are established over the substrate, extending through the BSG, word lines, and insulating layers. This method for manufacturing the memory device involves creating first insulating layers and a BSG layer over the substrate, followed by the formation of dielectric trenches and word line layers.

Career Highlights

Ming Wang has worked with notable companies such as Yangtze Memory Technologies Co., Ltd. and the State Grid Corporation of China. His experience in these organizations has contributed to his expertise in memory technology and innovation.

Collaborations

Ming Wang has collaborated with talented individuals in his field, including Yali Song and Li Hong Xiao. Their teamwork has likely fostered an environment of creativity and innovation.

Conclusion

Ming Wang's contributions to the field of memory technology, particularly through his patents on 3D NAND memory devices, highlight his role as a leading inventor. His work continues to influence advancements in the industry, showcasing the importance of innovation in technology.