The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 12, 2021

Filed:

Aug. 15, 2019
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Ming Wang, Wuhan, CN;

Hong Tao Liu, Wuhan, CN;

Yali Song, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 16/34 (2006.01); G11C 16/08 (2006.01); G11C 16/12 (2006.01); G11C 16/28 (2006.01); H01L 27/24 (2006.01);
U.S. Cl.
CPC ...
G11C 16/3418 (2013.01); G11C 16/08 (2013.01); G11C 16/12 (2013.01); G11C 16/28 (2013.01); H01L 27/249 (2013.01);
Abstract

Embodiments of 3D memory devices and methods for operating the 3D memory devices are disclosed. In an example, a method for operating a 3D memory device is disclosed. The 3D memory device includes memory decks each including memory layers in a vertical direction. Each memory layer in a first memory deck is first programmed. The first programming includes applying a program voltage to the memory layer and a first channel pass voltage smaller than the program voltage to each rest of the memory layers. Each memory layer in a second memory deck above the first memory deck is second programmed. The second programming includes applying the program voltage to the memory layer and the first channel pass voltage to each rest of the memory layers. The second programming further includes applying a second channel pass voltage smaller than the first channel pass voltage to each memory layer in the first memory deck.


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