Ming-Shun Hsu

Ming-Shun Hsu is a prominent inventor based in Miaoli County, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of nine patents. His work focuses on advanced diode structures and high voltage metal-oxide-semiconductor (HVMOS) transistor devices.

Latest Patents

One of his latest patents is a diode structure that includes a rectangular first doping region surrounded by a second doping region. This second doping region is separated from the first by a first isolation structure. Additionally, a third doping region surrounds the second, with the two separated by a second isolation structure. The arrangement of these regions forms a quadruple concentric rectangular ring around the first doping region. Another notable patent is a method of forming a high voltage metal-oxide-semiconductor transistor device. This method involves providing a substrate, forming a first insulation structure and a trench, and creating a base region that completely encompasses the trench. The process continues with the formation of a gate dielectric layer and a gate structure, followed by the creation of drain and source regions in the substrate.

Career Highlights

Ming-Shun Hsu is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His innovative work has contributed to advancements in electronic devices and systems.

Collaborations

Some of his notable coworkers include Ke-Feng Lin and Chih-Chung Wang, who have collaborated with him on various projects.

Conclusion

Ming-Shun Hsu's contributions to semiconductor technology through his patents and work at United Microelectronics Corporation highlight his role as a key innovator in the field. His advancements continue to influence the development of electronic devices.