Company Filing History:
Years Active: 2014-2018
Title: Innovations of Ming-Shun Hsu
Introduction
Ming-Shun Hsu is a prominent inventor based in Miaoli County, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of nine patents. His work focuses on advanced diode structures and high voltage metal-oxide-semiconductor (HVMOS) transistor devices.
Latest Patents
One of his latest patents is a diode structure that includes a rectangular first doping region surrounded by a second doping region. This second doping region is separated from the first by a first isolation structure. Additionally, a third doping region surrounds the second, with the two separated by a second isolation structure. The arrangement of these regions forms a quadruple concentric rectangular ring around the first doping region. Another notable patent is a method of forming a high voltage metal-oxide-semiconductor transistor device. This method involves providing a substrate, forming a first insulation structure and a trench, and creating a base region that completely encompasses the trench. The process continues with the formation of a gate dielectric layer and a gate structure, followed by the creation of drain and source regions in the substrate.
Career Highlights
Ming-Shun Hsu is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His innovative work has contributed to advancements in electronic devices and systems.
Collaborations
Some of his notable coworkers include Ke-Feng Lin and Chih-Chung Wang, who have collaborated with him on various projects.
Conclusion
Ming-Shun Hsu's contributions to semiconductor technology through his patents and work at United Microelectronics Corporation highlight his role as a key innovator in the field. His advancements continue to influence the development of electronic devices.
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