The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Oct. 06, 2014
United Microelectronics Corp., Hsin-Chu, TW;
Ming-Shun Hsu, Miaoli County, TW;
UNITED MICROELECTRONICS CORP., Hsin-Chu, TW;
Abstract
A HVMOS transistor device is provided. The HVMOS has a substrate, a gate structure, a drain region and a source region, a base region and a gate dielectric layer. The substrate has a first insulating structure disposed therein. The gate structure is disposed on the substrate and comprises a first portion covering a portion of the first insulating structure. The drain region and the source region are disposed in the substrate at two respective sides of the gate, and comprise a first conductivity type. The base region encompasses the source region, wherein the base region comprises a second conductivity type complementary to the first conductivity type. The gate dielectric layer is between the gate and the drain region, the base region and the substrate. The gate structure further comprises a second portion penetrating into the base region. A method of forming the HVMOS is further provided.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile