The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jun. 12, 2018

Filed:

Jan. 07, 2016
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Ke-Feng Lin, Taipei, TW;

Hsuan-Po Liao, Hsinchu County, TW;

Ming-Shun Hsu, Miaoli County, TW;

Chih-Chung Wang, Hsinchu, TW;

Chiu-Te Lee, Hsinchu County, TW;

Shih-Teng Huang, Taichung, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/8615 (2013.01); H01L 29/0649 (2013.01); H01L 29/0692 (2013.01); H01L 29/861 (2013.01);
Abstract

A diode structure includes a rectangular first doping region, and a second doping region surrounds the first doping region wherein the first doping region and the second doping region are separated by a first isolation structure. A third doping region surrounds the second doping region wherein the second doping region and the third doping region are separated by a second isolation structure. The first isolation structure, the second doping region, the second isolation structure and the third doping region are arranged in a quadruple concentric rectangular ring surrounding the first doping region.


Find Patent Forward Citations

Loading…