The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2015
Filed:
Nov. 21, 2013
United Microelectronics Corp., Hsinchu, TW;
Chiu-Te Lee, Hsinchu County, TW;
Ming-Shun Hsu, Miaoli County, TW;
Ke-Feng Lin, Taipei, TW;
Chih-Chung Wang, Hsinchu, TW;
Hsuan-Po Liao, Hsinchu County, TW;
Shih-Teng Huang, Taichung, TW;
Shu-Wen Lin, Hsinchu County, TW;
Su-Hwa Tsai, Hsinchu, TW;
Shih-Yin Hsiao, Chiayi County, TW;
UNITED MICROELECTRONICS CORP., Hsinchu, TW;
Abstract
A semiconductor structure is provided. The semiconductor structure comprises a substrate, a deep well formed in the substrate, a first well and a second well formed in the deep well, a gate electrode formed on the substrate and disposed between the first well and the second well, a first isolation, and a second isolation. The second well is spaced apart from the first well. The first isolation extends down from the surface of the substrate and is disposed between the gate electrode and the second well. The second isolation extends down from the surface of the substrate and is adjacent to the first well. A ratio of a depth of the first isolation to a depth of the second isolation is smaller than 1.