Min-Hsian Chen

Title: Min-Hsian Chen: Innovator in Semiconductor Technology

Introduction

Min-Hsian Chen is a prominent inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 4 patents. His work focuses on enhancing the performance and reliability of MOS transistors, which are crucial components in modern electronic devices.

Latest Patents

Among his latest patents, Chen has developed a semiconductor device structure aimed at reducing the hot carrier effect in MOS transistors. This innovative structure includes a MOS transistor, a silicon-rich silicon nitride layer with a refractive index of approximately 2.00-2.30, and a dielectric layer. The silicon-rich silicon nitride layer is strategically placed between the MOS transistor and the dielectric layer, covering the source/drain region, the spacer, and the gate conductor of the MOS transistor. Additionally, he has patented a method for reducing the hot carrier effect of MOS transistors, further demonstrating his expertise in this area.

Career Highlights

Min-Hsian Chen is currently employed at United Microelectronics Corporation, a leading company in the semiconductor industry. His role involves research and development, where he applies his knowledge to create advanced semiconductor solutions. His contributions have been instrumental in driving innovation within the company and the industry at large.

Collaborations

Chen collaborates with various professionals in his field, including his coworker Ching-Hsing Hsieh. Together, they work on projects that push the boundaries of semiconductor technology and improve device performance.

Conclusion

Min-Hsian Chen's work in semiconductor technology exemplifies the impact of innovation on modern electronics. His patents and contributions continue to shape the future of the industry, making him a notable figure in the field.