The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 03, 2007
Filed:
Apr. 13, 2005
Min-hsian Chen, Hsinchu County, TW;
Ching-hsing Hsieh, Hsinchu County, TW;
Min-Hsian Chen, Hsinchu County, TW;
Ching-Hsing Hsieh, Hsinchu County, TW;
United Microelectronics Corp., Hsinchu, TW;
Abstract
A salicide process is provided. A metal layer selected from a group consisting of titanium, cobalt, platinum, palladium and an alloy thereof is formed over a silicon layer. A first thermal process is performed. Next, a second thermal process is performed, wherein the second thermal process includes a first step performed at 600˜700 degrees centigrade for 10˜60 seconds and a second step performed at 750˜850 degrees centigrade for 10˜60 seconds. If the metal layer is selected from a group consisting of nickel and an alloy thereof is formed on a silicon layer, the first step of the second thermal process is performed at 300˜400 degrees centigrade for 10˜60 seconds and the second step of the second thermal process is performed at 450˜550 degrees centigrade for 10˜60 seconds.