United Microelectronics Corp.

Min-Hsian Chen

Ching-Hsing Hsieh

A semiconductor device structure is described, including a MOS transistor, a silicon-rich silicon nitride layer having a refractive index of about 2.00-2.30, and a dielectric layer. The silicon-rich silicon nitride layer is disposed between the MOS transistor and the dielectric layer, and covers the source/drain region, the spacer and the gate conductor of the MOS transistor.

Semiconductor device structure for reducing hot carrier effect of MOS transistor

Method for reducing hot carrier effect of MOS transistor

A salicide process is provided. A metal layer selected from a group consisting of nickel and an alloy thereof is formed on a silicon layer, the first step of the second thermal process is performed at 300&#x2dc;400 degrees centigrade for 10&#x2dc;60 seconds and the second step of the second thermal process is performed at 450&#x2dc;550 degrees centigrade for 10&#x2dc;60 seconds.

Salicide process

A salicide process is provided. A metal layer selected from a group consisting of titanium, cobalt, platinum, palladium and an alloy thereof is formed over a silicon layer. A first thermal process is performed. Next, a second thermal process is performed, wherein the second thermal process includes a first step performed at 600&#x2dc;700 degrees centigrade for 10&#x2dc;60 seconds and a second step performed at 750&#x2dc;850 degrees centigrade for 10&#x2dc;60 seconds. If the metal layer is selected from a group consisting of nickel and an alloy thereof is formed on a silicon layer, the first step of the second thermal process is performed at 300&#x2dc;400 degrees centigrade for 10&#x2dc;60 seconds and the second step of the second thermal process is performed at 450&#x2dc;550 degrees centigrade for 10&#x2dc;60 seconds.

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Hsinchu County, Taiwan

Min-Hsian Chen