The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2009
Filed:
Apr. 27, 2005
Applicants:
Min-hsian Chen, Jhudong Township, Hsinchu County, TW;
Ching-hsing Hsieh, Jhubei, TW;
Inventors:
Min-Hsian Chen, Jhudong Township, Hsinchu County, TW;
Ching-Hsing Hsieh, Jhubei, TW;
Assignee:
United Microelectronics Corp., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/94 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device structure is described, including a MOS transistor, a silicon-rich silicon nitride layer having a refractive index of about 2.00-2.30, and a dielectric layer. The silicon-rich silicon nitride layer is disposed between the MOS transistor and the dielectric layer, and covers the source/drain region, the spacer and the gate conductor of the MOS transistor.