Hsin-Chu, Taiwan

Min-Feng Hung

USPTO Granted Patents = 6 

Average Co-Inventor Count = 2.3

ph-index = 2

Forward Citations = 5(Granted Patents)


Location History:

  • New Taipei, TW (2018 - 2019)
  • Hsin-Chu, TW (2021 - 2023)
  • Hsing-Chu, TW (2022 - 2024)

Company Filing History:


Years Active: 2018-2024

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6 patents (USPTO):Explore Patents

Title: Min-Feng Hung: Innovator in Memory Device Technology

Introduction

Min-Feng Hung is a prominent inventor based in Hsin-Chu, Taiwan. He has made significant contributions to the field of memory devices, holding a total of six patents. His work focuses on advancing technology in 3D and flash memory devices, which are crucial for modern electronic applications.

Latest Patents

Among his latest patents is a groundbreaking invention titled "3D and flash memory device and method of fabricating the same." This innovative device features a gate stack structure, a channel pillar, and both first and second conductive pillars. The design includes a charge storage structure and a protective cap, ensuring efficient operation and reliability. Another notable patent is the "Method for forming memory device," which outlines a process for creating a memory device that includes a substrate and a stack of conductive and insulating layers. This method enhances the performance and efficiency of memory structures.

Career Highlights

Min-Feng Hung is currently employed at Macronix International Co., Ltd., a leading company in the semiconductor industry. His expertise in memory technology has positioned him as a key player in the development of advanced memory solutions. His contributions have not only advanced the company's goals but have also influenced the broader field of memory technology.

Collaborations

Min-Feng has collaborated with talented coworkers such as Chia-Jung Chiu and Guan-Ru Lee. Together, they have worked on various projects that push the boundaries of memory device technology.

Conclusion

Min-Feng Hung's innovative work in memory devices exemplifies the importance of research and development in technology. His patents and contributions continue to shape the future of memory solutions, making a lasting impact on the industry.

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