The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 07, 2021

Filed:

May. 15, 2019
Applicant:

Macronix International Co., Ltd., Hsinchu, TW;

Inventors:

Min-Feng Hung, Hsin-Chu, TW;

Chia-Jung Chiu, Hsin-Chu, TW;

Guan-Ru Lee, Hsin-Chu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/11582 (2017.01); H01L 21/762 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11582 (2013.01); H01L 21/76224 (2013.01); H01L 29/41741 (2013.01);
Abstract

A memory device includes a substrate; a stack including a plurality of conductive layers and a plurality of insulating layers being alternatively stacked on the substrate; a plurality of memory structures formed on the substrate and penetrating the stack; a plurality of isolation structures formed on the substrate and penetrating the stack, wherein the isolation structures dividing the memory structures into a plurality of first memory structures and a plurality of second memory structures; and a plurality of common source pillars formed on the substrate and penetrating the stack, wherein the common source pillars directly contact the isolation structures.


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