The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 20, 2018
Filed:
Mar. 13, 2017
Macronix International Co., Ltd., Hsinchu, TW;
MACRONIX INTERNATIONAL CO., LTD., Hsinchu, TW;
Abstract
A method for forming a semiconductor structure includes the following steps. First, a preliminary structure is provided. The preliminary structure has an array region. The preliminary structure includes a plurality of first stacks in the array region. Then, a first dielectric layer is formed on the first stacks. A first hard mask layer is formed on the first dielectric layer. An insulating material is formed on the first hard mask layer. Then, a planarization process stopped on the first hard mask layer is conducted. Thereafter, the first hard mask layer is removed. A second hard mask layer is formed on the first dielectric layer. A second dielectric layer is formed on the second hard mask layer. A plurality of contacts are formed through the second dielectric layer, the second hard mask layer and the first dielectric layer to the preliminary structure.