Min-Cheng Chen

Title: Min-Cheng Chen: Innovator in Semiconductor Technology

Introduction

Min-Cheng Chen is a prominent inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of five patents. His work focuses on advanced memory structures that enhance the performance and efficiency of electronic devices.

Latest Patents

Among his latest patents is a 3D monolithic stacking memory structure that incorporates an oxide-semiconductor field effect transistor and a ferroelectric metal-insulator-metal storage capacitor. This innovative design features a semiconductor substrate with a field effect transistor (FET) and multiple back-end metal layers. The oxide-semiconductor FET (OSFET) is integrated within these layers, connecting its drain to the gate of the FET. Additionally, the ferroelectric metal-insulator-metal (FEMIM) storage capacitor is strategically placed to optimize performance. Another notable patent is a ferroelectric memory structure that includes a substrate, a ferroelectric capacitor structure, and a switch device. This design utilizes alternating layers of electrodes and dielectric materials to enhance memory capabilities.

Career Highlights

Min-Cheng Chen is currently employed at Powerchip Semiconductor Manufacturing Corporation, where he continues to push the boundaries of semiconductor innovation. His expertise in memory structures has positioned him as a key player in the industry.

Collaborations

Throughout his career, Min-Cheng has collaborated with notable colleagues, including Shou-Zen Chang and Ming-Han Liao. These partnerships have fostered a collaborative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Min-Cheng Chen's contributions to semiconductor technology, particularly in memory structures, have established him as a leading inventor in his field. His patents reflect a commitment to advancing electronic device performance and efficiency.