Michiaki Sano

USPTO Granted Patents = 40 (Patent Applications = 2)

Average Co-Inventor Count = 3.6

ph-index = 13

Forward Citations = 529(Granted Patents)

Location History:

Aichi ken, JP (2015)
Aichi, JP (2016 - 2017)
Ichinomiya, JP (2016 - 2023)
Yokkaichi, JP (2016 - 2024)

Company Filing History:

37 out of 4,519

Sandisk Technologies Inc.

Western Digital Technologies, Inc.

patents

Years Active: 2015-2025

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40 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12416589 - Systems and methods for non-destructive inspection of semiconductor devices using reflective X-ray microscope tomographic imaging (2025-09-16),

2. 12408335 - Three-dimensional memory device containing word line contacts which extend through drain-select-level isolation structures and methods of making the same (2025-09-02),

3. 12394668 - Semiconductor device having edge seal and method of making thereof without metal hard mask arcing (2025-08-19),

4. 12185540 - Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacement (2024-12-31),

5. 11973026 - Three-dimensional memory device including stairless word line contact structures and method of making the same (2024-04-30),

6. 11778818 - Three-dimensional memory device with punch-through-resistant word lines and methods for forming the same (2023-10-03),

7. 11569139 - Electrical overlay measurement methods and structures for wafer-to-wafer bonding (2023-01-31),

8. 11101289 - Three-dimensional memory device with composite charge storage structures and methods for forming the same (2021-08-24),

9. 10994239 - Spiral gas adsorption apparatus and method of using the same (2021-05-04),

10. 10923496 - Three-dimensional memory device containing a replacement buried source line and methods of making the same (2021-02-16),

11. 10797035 - Bonded assembly containing side bonding structures and methods of manufacturing the same (2020-10-06),

12. 10790296 - Distortion-compensated wafer bonding method and apparatus using a temperature-controlled backside thermal expansion layer (2020-09-29),

13. 10756106 - Three-dimensional memory device with locally modulated threshold voltages at drain select levels and methods of making the same (2020-08-25),

14. 10553599 - Three-dimensional memory device containing drain select isolation structures and on-pitch channels and methods of making the same without an etch stop layer (2020-02-04),

15. 10468459 - Multiple vertical TFT structures for a vertical bit line architecture (2019-11-05),

Title: Profile of Michiaki Sano: Innovator in Three-Dimensional Memory Technology

Introduction

Michiaki Sano is a prominent inventor based in Yokkaichi, Japan, recognized for his significant contributions to the field of memory technology. With an impressive portfolio of 37 patents, Sano has established himself as an influential figure in the innovation of three-dimensional memory devices.

Latest Patents

One of Sano's latest patents is focused on a three-dimensional memory device and the method of making it by forming a channel and memory film after word line replacement. This innovative method details the creation of a memory device by forming an alternating stack of insulating layers and sacrificial material layers over a substrate. It emphasizes the significance of forming a memory opening extending through the stack, with intricate processes involving replaceable sacrificial layers and conductive layers to enhance memory functionality.

Another recent patent by Sano covers the design of a three-dimensional memory device that includes stairless word line contact structures. This patent describes a memory device composed of an alternating stack of insulating and electrically conductive layers, incorporating memory openings and fill structures essential for memory array functionality. A unique aspect of this invention is the laterally-isolated contact via assemblies, which enhance the device's operational efficiency by utilizing a corrugated vertical cross-sectional profile for the insulating spacer.

Career Highlights

Throughout his career, Michiaki Sano has played a pivotal role in advancing memory technology. He has worked at notable companies, including SanDisk Technologies Inc. and SanDisk 3D LLC, where he contributed to pioneering innovations in memory devices. These experiences have enabled him to develop a deep understanding of the complexities involved in three-dimensional memory systems.

Collaborations

Sano’s work has been bolstered by collaborations with esteemed colleagues in the industry, including Akira Nakada and Hiroshi Sasaki. Their collective expertise has undoubtedly fueled innovative advancements and breakthroughs in the field of semiconductor memory technologies.

Conclusion

Michiaki Sano's profound impact on memory technology is evident through his extensive patent portfolio and collaborative efforts with peers in the industry. His innovations in three-dimensional memory devices are paving the way for future advancements, showcasing the limitless potential of the semiconductor field. As technology continues to evolve, Sano’s contributions will remain pivotal in shaping the future of memory solutions.

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