IDiyas

For the Inventor, By the Inventor

Haifa, Israel

Micha Gutman

USPTO Granted Patents = 9 

Average Co-Inventor Count = 4.5

ph-index = 3

Forward Citations = 23(Granted Patents)


Location History:

  • Migdal Haemek, IL (2005 - 2008)
  • Haifa, IL (2006 - 2016)

Company Filing History:

goldMedal9 out of 190 
 
Tower Semiconductor Ltd.
 patents
silverMedal1 out of 10 
 
Tower Partners Semiconductor Co., Ltd.
 patents
where one patent can have more than one assignee

Years Active: 2005-2025

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9 patents (USPTO):Explore Patents
1. 12260922 - Semiconductor device for writing to a storage element (2025-03-25),
2. 9379194 - Floating gate NVM with low-moisture-content oxide cap layer (2016-06-28),
3. 9082867 - Embedded cost-efficient SONOS non-volatile memory (2015-07-14),
4. 8722496 - Method for making embedded cost-efficient SONOS non-volatile memory (2014-05-13),
5. 8344440 - Three-terminal single poly NMOS non-volatile memory cell with shorter program/erase times (2013-01-01),
6. 7439575 - Protection against in-process charging in silicon-oxide-nitride-oxide-silicon (SONOS) memories (2008-10-21),
7. 7060627 - Method of decreasing charging effects in oxide-nitride-oxide (ONO) memory arrays (2006-06-13),
8. 7016225 - Four-bit non-volatile memory transistor and array (2006-03-21),
9. 6959920 - Protection against in-process charging in silicon-oxide-nitride-oxide-silicon (SONOS) memories (2005-11-01),

Title: The Innovative Contributions of Micha Gutman

Introduction

Micha Gutman is a prominent inventor based in Haifa, Israel, known for his significant contributions to the field of semiconductor technology. With a total of nine patents to his name, Gutman has made remarkable advancements that enhance the functionality and efficiency of semiconductor devices.

Latest Patents

Among his latest patents is a semiconductor device designed for writing to a storage element. This innovative device includes a storage element write unit that is capable of being electrically written only once and can store two values. The write controller is connected to the storage element and is configured to perform a write operation based on a specific control signal. Additionally, a write state detection circuit is integrated to monitor the write state of the storage element, ensuring that the write operation is halted after a predetermined time once the write state is detected.

Another notable patent is for a floating gate non-volatile memory (NVM) that features a low-moisture-content oxide cap layer. This design addresses the challenges of mobile hydrogen atoms and ions during back-end processing. The metallization structure includes multiple layers formed over front-end structures, with each layer designed to minimize the production and migration of hydrogen, thereby enhancing charge storage capabilities.

Career Highlights

Micha Gutman has worked with several esteemed companies in the semiconductor industry, including Tower Semiconductor Ltd. and Tower Partners Semiconductor Co., Ltd. His experience in these organizations has allowed him

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