The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2008
Filed:
Feb. 23, 2005
Yakov Roizin, Afula, IL;
Efraim Aloni, Migdal Haemek, IL;
Micha Gutman, Migdal Haemek, IL;
Menachem Vofsy, Midgal Haemek, IL;
Avi Ben-gigi, Migdal Haemek, IL;
Yakov Roizin, Afula, IL;
Efraim Aloni, Migdal Haemek, IL;
Micha Gutman, Migdal Haemek, IL;
Menachem Vofsy, Midgal Haemek, IL;
Avi Ben-Gigi, Migdal Haemek, IL;
Tower Semiconductor Ltd., Migdal Haemek, IL;
Abstract
A pre-metal dielectric structure of a SONOS memory structure includes a UV light-absorbing film, which prevents the ONO structure from being electronically charged in response to UV irradiation. In one embodiment, the pre-metal dielectric structure includes a first pre-metal dielectric layer located over the SONOS memory structure, a light-absorbing structure located over the first pre-metal dielectric layer, and a second pre-metal dielectric layer located over the light-absorbing structure. The light-absorbing structure can be a continuous polysilicon or amorphous silicon layer. Alternately, the light-absorbing structure can include one or more patterned polysilicon layers. In another embodiment, the SONOS transistors include UV light absorbing polysilicon spacers.