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Hangzhou, China

Meng Wang

USPTO Granted Patents = 23 (Patent Applications = 5)

Average Co-Inventor Count = 3.1

ph-index = 2

Forward Citations = 11(Granted Patents)

Location History:

Zhejiang, CN (2022)
Hangzhou, CN (2017 - 2024)

Company Filing History:

Silergy Semiconductor Technology (Hangzhou) Ltd

China Energy Engineering Group East China Electric Power Test Research Institute Co., Ltd.

Advanced New Technologies Co., Ltd.

Years Active: 2017-2025

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23 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12513963 - Bidirectional switching devices, its terminal structures, and electronic devices (2025-12-30),

2. 12310098 - Semiconductor structure having a semiconductor substrate and an isolation component (2025-05-20),

3. 12166091 - LDMOS transistor and method for manufacturing the same (2024-12-10),

4. 12119343 - Semiconductor structure having a semiconductor substrate and an isolation component (2024-10-15),

5. 11967644 - Semiconductor device comprising separate different well regions with doping types (2024-04-23),

6. 11942540 - Semiconductor device and method for manufacturing the same (2024-03-26),

7. 11887889 - Semiconductor device and method for manufacturing the same (2024-01-30),

8. 11830932 - Laterally diffused metal oxide semiconductor structure and method for manufacturing the same (2023-11-28),

9. 11742206 - Laterally diffused metal oxide semiconductor device and method for manufacturing the same (2023-08-29),

10. 11710787 - Laterally diffused metal oxide semiconductor device and method for manufacturing the same (2023-07-25),

11. 11581433 - Method for manufacturing a lateral double-diffused metal-oxide-semiconductor (ldmos) transistor (2023-02-14),

12. 11566542 - 660MW supercritical unit bypass control system and control method thereof (2023-01-31),

13. 11417647 - Semiconductor structure having a semiconducture substrate and an isolation component (2022-08-16),

14. 11329153 - Method for manufacturing laterally diffused metal oxide semiconductor device and semiconductor device (2022-05-10),

15. 11251276 - LDMOS transistor and method for manufacturing the same (2022-02-15),

Title: The Innovative Journey of Meng Wang

Introduction: Meng Wang is a visionary inventor hailing from Hangzhou, China, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Meng Wang's latest patents include cutting-edge advancements in artificial intelligence, renewable energy technologies, and smart city solutions, solidifying his position as a pioneer in the industry.

Career Highlights: With a career spanning over two decades, Meng Wang has held key roles in leading tech companies, driving research and development initiatives that have resulted in numerous patents and technological breakthroughs.

Collaborations: Throughout his career, Meng Wang has collaborated with top research institutions, universities, and multinational corporations to push the boundaries of innovation further. His collaborative efforts have led to the development of revolutionary products and solutions.

Conclusion: Meng Wang's relentless pursuit of innovation and his passion for creating a better future through technology have established him as a prominent figure in the world of inventors. His contributions continue to inspire and shape the landscape of technological advancements globally.

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