The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 26, 2024
Filed:
May. 20, 2019
Applicant:
Silergy Semiconductor Technology (Hangzhou) Ltd, Hangzhou, CN;
Inventors:
Assignee:
Silergy Semiconductor Technology (Hangzhou) LTD, Hangzhou, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01); H01L 27/088 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 21/823493 (2013.01); H01L 21/823814 (2013.01); H01L 21/823857 (2013.01); H01L 21/823864 (2013.01); H01L 21/823878 (2013.01); H01L 21/823892 (2013.01); H01L 27/088 (2013.01); H01L 27/0922 (2013.01); H01L 27/0928 (2013.01); H01L 29/0623 (2013.01); H01L 29/1095 (2013.01); H01L 29/66681 (2013.01);
Abstract
A semiconductor device having an LDMOS transistor can include: a first deep well region having a first doping type; a drift region located in the first deep well region and having a second doping type; and a drain region located in the drift region and having the second doping type, where the second doping type is opposite to the first doping type, and where a doping concentration peak of the first deep well region is located below the drift region to optimize the breakdown voltage and the on-resistance of the LDMOS transistor.